Overview
The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.
Research directions
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
Nanofabrication Challenges
Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.
Perpendicular Shape Anisotropy
A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.
The team
Former members
Post-docs
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- J. Ranier Roiz (2015-2016)
- Nikita Strelkov (2016-2019)
PhD
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jyotirmoy CHATTERGEE (2014-2017)
- Hieu Tan NGUYEN (2013-2016)
- Antoine Chavent (2013-2015)
Process Engineers
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
Projects
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
Partners
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- Radboud Universiteit, Neijmegen, Netherlands
Recent news
- seminar – Material development for HAMR and its prospects (February 20th, 2026)
On Tuesday, May 5th 2026, we have the pleasure to welcome in SPINTEC Yukiko Takahashi from NIMS, Japan. She will give us a seminar at 09:00 entitled : Material development for HAMR and its prospects Place ... - PhD Defense by Subham Senapati – Spin-orbit torque based magnetic memories evaluation for cryogenic applications (January 26th, 2026)
On March 11th, at 14:00, Subham Senapati (SPINTEC) will defend his PhD thesis entitled : Spin-orbit torque based magnetic memories evaluation for cryogenic applications Place : IRIG/SPINTEC, CEA Building 10.05, auditorium 445 (presential access to the ... - PhD Defense – Microscopie électronique operando pour l’étude de mémoires magnétiques (November 14th, 2025)
Jeudi 4 décembre à 14h Augustin Nogier (SPINTEC) soutiendra sa thèse intitulée : Microscopie électronique operando pour l’étude de mémoires magnétiques Lieu : Minatec Chrome I. La soutenance sera suivie d’une réception à la maison Minatec ... - Physics of current-induced switching in 3D nanopillars (November 03rd, 2025)
We simulated the current-induced switching of magnetization of short vertical magnetic nanopillars as the free layer in a magnetic tunnel junction. Considering spin accumulation is crucial in such 3D elements, leading to an enhancement of ... - Controlling effective anisotropy for efficient switching at cryogenic temperature (October 24th, 2025)
The field of cryoelectronics holds promise for high-performance computing applications, particularly within the realm of quantum computing. Recent advances in quantum computing systems have spurred the investigation of various technologies suitable for cryogenic environments. Among ...
