2D AND SEMICONDUCTOR SPINTRONICS Archives - Page 5 of 5

Millimeter-scale layered MoSe₂ grown on sapphire and evidence for negative magnetoresistance (April 14th, 2017)

We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]

Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface (January 09th, 2017)

We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

PhD defense : Study of injection and detection in silicon and germanium: From local measure of accumulation to non-local detection of pure spin current (October 12th, 2016)

Who : Fabien RORTAIS from DRF/INAC/SPINTEC When : On the 18th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre de GreEn-ER- 21 rue des Martyrs, 38000 Grenoble Title : Study of injection and detection in silicon and germanium: From local measure of accumulation to non-local detection of pure spin […]

24 months postdoc position available at the CEA Grenoble, from December 2016 (October 04th, 2016)

Van der Waals epitaxy of III-Nitrides semiconductors ((Ga, In, Al)N) on 2D crystals ((Mo,W)Se2) for optoelectronics applications Van der Waals (VdW) epitaxy is a particularly attractive method to grow crystalline materials without any requirement of lattice matching with the underlying material. Indeed, VdW epitaxy mechanisms relies on a very weak interaction between the epilayer and […]

Master students to visit SPINTEC and discuss our topics for internships (September 18th, 2016)

On 25th October 2016 our host Institut INAC welcomes students for a presentation of internship topics proposed to host Master-2 students during Spring 2017. Details will be provided later.

Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin valves (May 17th, 2016)

A CoFe based ferromagnetic alloy has been used in lateral spin valves to replace NiFe alloys, which are overwhelmingly exploited as ferromagnets electrodes in lateral spintronic devices. By using this second material, emitted signals are found to be one order of magnitude larger. In addition to using the electric charge of the electron, spintronic technologies […]