2D AND SEMICONDUCTOR SPINTRONICS




You find here the list of proposals for Master-2 internships to take place during Spring 2019. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]

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MAGICVALLEY – An ANR project

MAGICVALLEY stands for MAGnetism InduCed VALLEY polarization in large scale 2D materials (2018-2022). Objectives In the monolayer limit, two dimensional (2D) transition metal dichalcogenides (2H-MX2, with M=Mo, W and X=S, Se) are semiconductors with a sizeable (1-2 eV) and direct electronic bandgap as well as (degenerate) valleys at the K+/K- corners of the Brillouin zone. […]

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This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. The possibility to combine ultrathin magnetic and non-magnetic layers allowed creating hetero-structures whose dimensions are smaller than the characteristic lengths of the spin-dependent transport. This has notably led to the discovery of […]

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You find here the list of proposals for Master-2 internships to take place during Spring 2018. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]

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Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]

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Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited to generate spin accumulations and pure spin currents in bulk Ge. Here, we use […]

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At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system. By using a dynamical spin injection technique, we were able to demonstrate a record conversion yield between spin and charge current in this system, moreover that is tunable in amplitude and sign by an electrostatic gate, a premiere. […]

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We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]

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We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

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Who : Fabien RORTAIS from DRF/INAC/SPINTEC When : On the 18th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre de GreEn-ER- 21 rue des Martyrs, 38000 Grenoble Title : Study of injection and detection in silicon and germanium: From local measure of accumulation to non-local detection of pure spin […]

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