Overview The objective of the project is to combine all key ingredients for modern Spintronics and SpinOrbitronics modeling within a novel and original non-commercial multi-physics software. These key ingredients are the appropriate spin transport equations that are easy-implementable in a numerical solver, the simultaneous resolution of the spin-dependent transport and magnetization dynamics, and finally the […]

B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to […]

Prof. M. Chshiev is a theoretical physicist specializing on theory of spintronic phenomena in magnetic nanostructures and electronic structure of materials for spintronics. His background comprises both condensed matter theory and computational material science approaches including ab-initio, tight binding, free electron and diffusive approaches. He is Head of Theory Group at SPINTEC and have been […]

On June 27 at 11h Prof. Evgeny Tsymbal from University of Nebraska will give a talk entitled “Spintronics with Ferroelectrics” Place : l’amphithéâtre Laurent Puech (2-D-004) in GreEN-ER building “Spintronics with Ferroelectrics” Ferroelectric materials are characterized by a spontaneous electric polarization switchable by an applied electric field. If such a ferroelectric is interfaced with another […]

Advancing spintronic devices requires using novel 2D materials including graphene with featured properties. In particular, a significant effort has been focused on injecting spins and inducing magnetism in graphene giving rise to emerging field of graphene spintronics. It is demonstrated that robust spin polarization can be induced in graphene via proximity with magnetic insulators including […]

Dr. David Soriano Catalan Institute of Nanoscience and Nanotechnology (ICN2)  Where: room 434 A, Building 10.05, CEA-Grenoble.             The possibility to manipulate the magnetism at the atomic scale in 2D materials shown promising for the next generation of data storage devices and for quantum technologies. Hydrogenated graphene has demonstrated to be a good platform for such […]

On 25th October 2016 our host Institut INAC welcomes students for a presentation of internship topics proposed to host Master-2 students during Spring 2017. Details will be provided later.

Objectives ELECSPIN project has just been accepted at the 2016 ANR call. This collaborative research project aims to investigate the advanced concept of radically new nanoelectronics devices based on the electric-field control of spin-based phenomena and establish proof of principle demonstrations of multi-terminal energy efficient memory nano devices.  The main  objectives are: To explore, understand and optimize the physical mechanisms of […]

Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher than that of traditional metallic cobalt/platinum multilayers that are being researched for this property. In a material with a […]

L.D. Buda-Prejbeanu, H. Szambolics, F. Garcia-Sanchez, I. Firastrau, J.Ch. Toussaint The effect of the spin polarized current on the magnetization dynamics is an extremely hot topic nowadays both from fundamental and applicative point of view. The micromagnetic modeling become in this context an irreplaceable prediction tool for exploring at nm length scale the magnetization distribution […]