2D AND SEMICONDUCTOR SPINTRONICS




On Tuesday June 25, we have the pleasure to welcome Lindor Diallo from Université de Normandie and INSA Rouen, he will give us a seminar at 14:00, CEA/IRIG, Bat 1005, room 446 entitled : Atomic scale correlation of structural and magnetic properties of SiC semiconductor implanted with Fe. The discovery of giant magnetoresistance in 1988 […]

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Transition metal dichalcogenides (MoS2, WSe2, etc.) and topological insulators (Bi2Se3, Bi2Te3) are graphene siblings holding great promise for semiconductor spintronics. They possess an intense spin-orbit interaction that couples the electron momentum and spin. This coupling can be used to manipulate spins with electric fields, to convert charge currents into spin currents, and gives rise to […]

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Nanopoly — A FET-OPEN project

NANOPOLY proposes a ground-breaking yet cost effective method to extend our control over impedance and parasitic phenomena in monolithic circuit components by independently tuning electric permittivity and magnetic permeability of the integrated layers to values far beyond what nature can provide. This approach will re-define all components used in existing analogue circuit design regardless of […]

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Tocha for Dissipationless topological channels for information transfer and quantum metrology, is a Research and Innovation Action FETPROACTIVE project funded by the European Commission. The goal of TOCHA, a five years project head by Sergio O. Valenzuela from ICN2, Barcelona, and for which Spintec is partner, is to develop the next generation of topological devices […]

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MAGICVALLEY – An ANR project

MAGICVALLEY stands for MAGnetism InduCed VALLEY polarization in large scale 2D materials (2018-2022). Objectives In the monolayer limit, two dimensional (2D) transition metal dichalcogenides (2H-MX2, with M=Mo, W and X=S, Se) are semiconductors with a sizeable (1-2 eV) and direct electronic bandgap as well as (degenerate) valleys at the K+/K- corners of the Brillouin zone. […]

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You find here the list of proposals for Master-2 internships to take place during Spring 2018. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]

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We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]

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We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

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Who : Fabien RORTAIS from DRF/INAC/SPINTEC When : On the 18th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre de GreEn-ER- 21 rue des Martyrs, 38000 Grenoble Title : Study of injection and detection in silicon and germanium: From local measure of accumulation to non-local detection of pure spin […]

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Van der Waals epitaxy of III-Nitrides semiconductors ((Ga, In, Al)N) on 2D crystals ((Mo,W)Se2) for optoelectronics applications Van der Waals (VdW) epitaxy is a particularly attractive method to grow crystalline materials without any requirement of lattice matching with the underlying material. Indeed, VdW epitaxy mechanisms relies on a very weak interaction between the epilayer and […]

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