MRAM



Research team MRAM memories, within the Devices group


A new type of magnetic sensor based on the spin transfer torque using 50-100nm diameter perpendicular magnetic tunnel junctions was recently reported in the IEEE Sensors Journal. The paper demonstrates the magnetic field sensing principle, patented by Spintec in 2020, while also describing possible read-out methods and their associated signal conditioning electronics. Improvements over conventional […]

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Théo FROTTIER is among Best Poster Award winners at INTERMAG 2023 Conference taking place in May 2023 in Sendai, Japan. The title of the poster prepared with Aurélie KANDAZOGLOU, Cécile GREZES of Topological Spintronics team is “Non-Volatile Electric-Field Control of Spin-Orbit Torques and Anomalous Hall Effect in Perpendicular Ferromagnet-SrTiO3 systems”. The presented results clearly show […]

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Spintec laboratory is opening a four years engineer researcher position in the framework of the PEPR electronics (part of France 2030 strategy) – project EMCOM (emerging memories for computing).   Context: The cost of transferring information between different layers of storage and computing units now dominates the energy performance of conventional processors. This has created […]

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Position: The objective of the PhD project is to explore disruptive fabrication routes, cell and material designs to lift the two bottlenecks, related to fabrication and efficiency of the write operation with a spin-polarized current. While the motivation and objective is to give a real application potential to the proof of concept achieved so far, […]

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On Tuesday, March 07th 2023, we have the pleasure to welcome in SPINTEC Mathieu MUNSCH CEO and Co-founder of QNAMI. He will give us a seminar at 16:00, entitled: Measuring MRAM with Scanning NV Microscopy Place: SPINTEC Seminar, CEA Building 10.05 auditorium 445 (access needs authorization) skype link : https://webconf.cea.fr/ioan-lucian.prejbeanu/C89D5FFJ if this link does not […]

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On Thursday, March 16 2023, we have the pleasure to welcome in SPINTEC Julien Tranchida, Research Scientist at CEA Cadarache. He will give us a seminar at 14:00, entitled: Coupled magnetic and molecular dynamics: Methodology and application to the simulation of magneto-elastic effects in iron Place: SPINTEC Seminar, CEA Building 10.05 auditorium 445 (access needs […]

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  Spin-torque-nanodiodes based on magnetic tunnel junctions are promising candidates for RF energy harvesters and ultra-low power wake-up receivers with performances that are expected to surpass those of semiconductor diodes. Experiments on magnetic tunnel junctions with perpendicular magnetic anisotropy show how the performances can be optimized upon reducing the magnetic layer thickness and the device […]

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On Tuesday, November 22th, Pierre-Olivier Jubert Senior Technologist at Western Digital, San Jose (USA) will give us seminar on-line at 16:00, entitled : Characterization of the Switching Distributions of Heat-Assisted Magnetic-Recording Media Place : CEA Building 10.05 auditorium 445 (broadcast room) skype link : https://webconf.cea.fr/ioan-lucian.prejbeanu/C89D5FFJ if this link does not work see below (**) Abstract […]

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You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2023. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship, especially those coming from […]

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Perpendicular-shape-anisotropy magnetic random-access memory (PSA MRAM) has been proposed to maintain the thermal stability of solid-state magnetic bits down to a few nanometers in diameter. Here we confirm directly with high-spatial resolution and high-sensitivity electron holography that magnetization is weakly affected by temperature, in contrast with the conventional ultrathin MRAM cells. Magnetic random-access memory (MRAM) […]

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