List of projects

The list of major academic projects involving the lab is listed on this page since 2016.

ANR projects (French National research funding agency)

  • MILF – An ANR project (September 13th, 2019) MILF - An ANR project
    MILF stands for Magnetic Imaging at Low dimensions & high Frequencies. It is a 36-month-long early-carrier ANR project. Magnetic events such as domain reversal, domain wall propagation and vortex oscillations are fast processes, broad source ...
  • NV-APROC – An ANR project (August 12th, 2019) NV-APROC - An ANR project
    NV-APROC stands for Non Volatile MRAM-based Asynchronous PROCessor, a 42-month ANR project starting on October 2019, coordinated by Spintec. Micro and nano electronics integrated circuit domain has been strongly driven by the advent of ...
  • MISTRAL – An ANR project (August 12th, 2019) MISTRAL - An ANR project
    MISTRAL stands for MRAM/CMOS Hybridization to Secure Cryptographic Algorithms, an 42-month ANR project starting on October 2019, coordinated by EMSE (Ecole des Mines de St Etienne in Gardanne). MISTRAL is addressing the security of the cryptography ...
  • ADMIS – An ANR project (August 12th, 2019) ADMIS - An ANR project
    A very exciting field of research has recently been devoted to magnetic skyrmions: they are potential candidates to overcome the power consumption problems of the conventional microelectronic Von Neuman architectures where memory and logic functions ...
  • C3DS – An ANR-DFG project (December 09th, 2018) C3DS - An ANR-DFG project
    C3DS stands for Chemistry for three-dimensional Spintronics, and is a 36-month ANR-DFG project (2019-2022). Spintronics has become a mature technology for applications, such as magnetic field sensing and solid-state memories. However, it is almost exclusively ...

European projects

  • Reducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy (April 01st, 2020) Reducing the impact of operating temperature  in magnetic memory thanks to perpendicular shape anisotropy
    MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy ...
  • Spin accumulation dynamics in spintronic devices in the terahertz regime (March 26th, 2020) Spin accumulation dynamics in spintronic devices in the terahertz regime
    Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in ...
  • COMRAD – An H2020 ITN project (January 16th, 2020) COMRAD - An H2020 ITN project
    Overview COMRAD is an H2020 ITN projet (2020-2024). It will explore novel routes for the fastest possible and least dissipative magnetic switching in random access devices by bringing together the two disciplines of ultrafast magnetism and ...
  • Nanopoly — A FET-OPEN project (February 15th, 2019) Nanopoly -- A FET-OPEN project
    NANOPOLY proposes a ground-breaking yet cost effective method to extend our control over impedance and parasitic phenomena in monolithic circuit components by independently tuning electric permittivity and magnetic permeability of the integrated layers to values ...
  • TOCHA – A FETPROACTIVE project at SPINTEC (October 30th, 2018) TOCHA - A FETPROACTIVE project at SPINTEC
    Tocha for Dissipationless topological channels for information transfer and quantum metrology, is a Research and Innovation Action FETPROACTIVE project funded by the European Commission. The goal of TOCHA, a five years project head by Sergio ...

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