The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
CMOS Integration for Non-Volatile Logic
The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.
Thermally Assisted Switching
Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.
- Nikita STRELKOV (2016-2019)
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- Hieu Tan NGUYEN (2013-2016)
- Jyotirmoy CHATTERGEE (2014-2017)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- Editor – Proceedings of the IEEE, Special issue on Spintronics (October 01st, 2016)
Special issue on Spintronics, published in the proceedings of the IEEE, vol.104 (10), October 2016 Editors: Hideo Ohno, Mark Stiles, Bernard Dieny
- GREAT – A H2020 ICT project at SPINTEC (June 30th, 2016)
Overview GREAT (European H2020 project) was accepted at the Summer 2015. Its kick-off meeting took place at SPINTEC in Grenoble on February 22nd-23rd 2016. The project aims at developing magnetic stacks able to equally perform memory, radio-frequency ...
- SPICE – An H2020 FET project at SPINTEC (May 19th, 2016)
A new research project has been accepted at the last FET H2020 call. The objective of SPICE is to realize a novel integration platform that combines photonic, magnetic and electronic components. Its validity will be shown ...
- Soutenance de thèse – Antoine CHAVENT (January 15th, 2016)
Jeudi 21 Janvier 2016 à 14H00, Phelma MINATEC – Amphithéâtre M001 (3 Parvis Louis Néel – 38016 Grenoble) Monsieur Antoine CHAVENT du DSM/INAC/SPINTEC soutiendra une thèse intitulée « Réduction du champ d’écriture de mémoires magnétiques à écriture assistée thermiquement ...
- Improving writing properties of TAS-MRAM by changing the voltage pulse shape (January 11th, 2016)
During writing of Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM), the torque due to a voltage pulse may be used to help writing. As part of collaboration between Spintec and Crocus Technology, we brought ...