From new concepts to devices : we are exploring new concepts in spintronics based on spin dependent transport with various systems; structure inversion asymmetry (spin orbit torques, Rashba effect, Spin Hall Effect, Topological Insulators), and alternative geometries in order to develop innovative architectures of devices.
Spin Orbit Torques
We aim at understanding and mastering spin orbit torques for efficient and deterministic magnetization switching with in plane currents.
Spin to charge inter-conversion
We study different mechanisms to inter-convert spin and charge currents using spin orbit interaction: Spin Hall effect, Rashba effect at interfaces and surfaces of Topological insulators.
We develop electrically addressable non-volatile memories combining high speed and infinite endurance.
Novel devices and concepts
We study spin dependent transport and pure spin current physics in lateral spin valves as well as novel ways to tailor the magnetic states of nanomagnets, like magnetic origamis.
- Soong-Gun JE (2016-2018)
- Haozhe YANG (2016-2019)
- Yu FU (2018-2019)
- Mohamed Ali NSIBI (2014-2018)
- Toshiki GUSHI (exchange program Univ. of Tsukuba 2017-2018)
- Jayshankar NATH (2015-2018)
- Paul NOEL (2016-2019)
- Roméo JUGE (2016-2019)
- Sambit GOSH (with Univ. of Tsukuba, 2018-2021)
- Pyunghwa JANG (visitor from Korea Univ., 2018-2020)
- Maxen COSSET-CHENEAU (2019-2022)
- EU TOCHA (2019-2023)
- DARPA (2018-2021)
- ANR JCJC, O. Boulle (2018-2021)
- ERC Smart Design, M. Miron (2015-2020)
- ANR OISO (2017-2021)
- ANR TOPRISE (2016-2019)
- ANR SOSPIN (2013-2017)
- EU SPOT (2013-2016)
- Néel Institut, Grenoble (France)
- Unité Mixte Physique CNRS/Thalès, Palaiseau (France)
- Laboratoire de Physique des Solides, Orsay (France)
- Antaios, Grenoble (France)
- CEA/LETI Grenoble (France)
- Karlsruhe Institute of Technology (Germany)
- National Center for Scientific Research, Demokritos (Greece)
- Catalan Institute of Nanotechnology, Barcelona (Spain)
- University of Barcelona, (Spain)
- In Silicio, (France)
- Singulus (Germany)
- Mainz (Germany)
Former team members
- Thomas BRÄCHER (2015-2017)
- Yu FU (2015-2016)
- Murat CUBUKCU (2012-2015)
- Juan Carlos ROJAS SANCHEZ (2010-2013)
- Before 2012:Mario Aurino, Karol Marty, Yasmina Hadj Larbi
- Alexandre MOUILLON (2014-2018)
- Gilles ZHAND (2014-2017)
- Tuong Van PHAM (2014-2017)
- Defended before 2016: Alexandru Trifou, Emilie Jue, Alexandre Lopez, Marc Drouard
- Optical access of magnetic tunnel junctions for future hybrid spintronic–photonic memory circuits (August 24th, 2020)
We demonstrate in this study a fabrication process that enables the realization of a top transparent conductive electrode of magnetic tunnel junctions (MTJs), building blocks of magnetic random access memories (MRAMs). This work opens up ...
- Room-Temperature Skyrmions at Zero Field in Exchange-Biased Ultrathin Films (July 17th, 2020)
Magnetic skyrmions are topologically protected spin textures of great interest for nanoscale information storage and processing. However, stabilizing small skyrmions without applying an external magnetic field remains challenging. This study employs a thin ferromagnetic layer ...
- Metamagnetism of Weakly Coupled Antiferromagnetic Topological Insulators (July 06th, 2020)
Layered magnetic topological insulators are candidate to unveil novel electronic phases controlled by the magnetization. In MnBi4Te7, we evidenced a transition from an antiferromagnetic to a ferromagnetic-like metamagnetic state, possibly realizing the quantum anomalous Hall ...
- Paul NOËL receives a PhD award from University Grenoble Alpes (June 03rd, 2020)
Paul Noël has been awarded one out of the 9 awards of the University Grenoble Alpes, for PhDs defended in 2019. Paul Noël conducted his PhD work at SPINTEC, under the co-sueprvision of Jean-Philippe Attané ...
- Spintronique : technologie disruptive (Le Monde, blog Sciences2) (April 23rd, 2020)
Le blog Sciences2 du journal Le Monde du 23 avril 2020 La nouvelle nous vient de la revue Nature de ce matin. Où une équipe française annonce une rupture énergétique en micro-électronique. Et plus exactement en ...