Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]

MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

The generation of a spin current and its further conversion to a charge current have attracted considerable attention, facilitating advances in basic physics along with the emergence of closely related applications in the field of spintronics. In this study, we experimentally and theoretically demonstrated the self-induced inverse spin Hall effect for spin-charge conversion, triggered by […]

We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and integrated it in a full nanosized magnetic tunnel junction pillar. In parallel, we developed a model describing the magnetization dynamics […]

In the field of spintronics, ferromagnetic/non-magnetic metallic multilayers are core building blocks for emerging technologies. Resonance experiments using stripline transducers are commonly used to characterize and engineer these stacks for applications. Here, we investigated the incompletely understood impact of eddy currents below the microwave magnetic skin-depth and explained the lineshape asymmetry and phase lags reported […]

Numerous studies investigated the use of synthetic membranes for photonic or biomedical applications. We report here on a recent type of biocompatible magnetically actuated membranes, partly originating from studies on magnetic particles for biology, consisting of PDMS/Au bilayers with embedded arrays of micrometric magnetic pillars. Flat at zero field, concave in an applied magnetic field, […]

Increasing the thermal budget beyond 400°C of magnetic random access memory (MRAM) cells is a major goal to allow for seamless conventional electronics integration. At these temperatures significant material diffusion can destroy the interface properties of new generation perpendicular magnetization stacks targeting technology nodes below 20nm. This study highlights the origin in the improvement obtained […]

In the field of spintronics, which relies on the spin-dependent transport properties of matter, exploring spin fluctuations and phase transitions in ultrathin films is essential as it provides key information to engineer materials for applications. Here, O. Gladii et al investigated the generic character of a novel method to probe spin fluctuations through demonstration with […]

Measured switching diagrams of perpendicular magnetic tunnel junctions exhibit unexpected behavior at high voltages associated with significant heating of the storage layer. The boundaries deviate from the critical lines corresponding to the coercive field, which contrasts with the theoretically predicted behavior of a standard macrospin-based model. In this paper, we are proposing a modified model […]