A consortium led by physicists at JGU Mainz, in collaboration with CNRS/Thales Palaiseau, SPINTEC and LNCMI Grenoble, and NTNU Trondheim, demonstrated that transporting spin-information at room temperature and over long distances is within reach. They established and took advantage of two remarkable features of the insulating hematite antiferromagnet. Firstly, it can carry spin-information via current-induced […]

Recent progress in nanotechnology has led to the development of spin-torque nano-oscillators (STNO), whose time constants, due to their nano-scale size, are naturally of the order of 1-100 nanoseconds. At SPINTEC we demonstrated experimentally for the first time that the use of such STNOs in swept-tuned microwave spectrum analyzers leads to a substantial reduction of […]

Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

We demonstrate in this study a fabrication process that enables the realization of a top transparent conductive electrode of magnetic tunnel junctions (MTJs), building blocks of magnetic random access memories (MRAMs). This work opens up the realization of future and faster nonvolatile memories based on hybrid spintronic photonic circuits. This new process has been electrically […]

The European consortium SpintronicFactory, largely supported by the French laboratories Spintec (Grenoble) and the CNRS-Thales Joint Lab (Palaiseau), publishes in the journal Nature Electronics an ambitious roadmap for spintronics. This discipline on the borderline between magnetism and microelectronics is indeed reaching maturity, offering broad prospects for innovation. B. Dieny, I. L. Prejbeanu, K. Garello, P. […]

The intense recent research on skyrmions has focused on multilayers of classical magnetic materials (Co, CoFeB, Fe…). In this work, the authors explore skyrmions in van der Waals bi-dimensional magnets, a new type of magnetic material in the broad family of 2D materials. Using ab initio and Monte Carlo calculations, they demonstrate that skyrmions should […]

Due to its good radiation effects tolerance and its inherent non volatility, Spin-Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is considered as a promising candidate for high-reliability electronics. A radiation tolerant circuit design suitable for space application is proposed in this study. Radiation effects research on semiconductors has been pursued since the 1960s becoming an extremely […]

Magnetic skyrmions are topologically protected spin textures of great interest for nanoscale information storage and processing. However, stabilizing small skyrmions without applying an external magnetic field remains challenging. This study employs a thin ferromagnetic layer exchange-biased by an antiferromagnetic film to stabilize ferromagnetic skyrmions down to 30 nm in diameter, at zero magnetic field. In […]

Layered magnetic topological insulators are candidate to unveil novel electronic phases controlled by the magnetization. In MnBi4Te7, we evidenced a transition from an antiferromagnetic to a ferromagnetic-like metamagnetic state, possibly realizing the quantum anomalous Hall regime in ultra-thin films above 1K. 3D topological insulators ideally have an insulating bulk and 2D gapless topological surface states […]

Topological insulators (TI) represent a new class of insulating materials hosting metallic surface states. Moreover, those surface states exhibit a Dirac cone energy dispersion where the strong spin-orbit coupling leads to a helical spin texture at the Fermi level. This property can be exploited to detect spin currents in conventional semiconductors like silicon or germanium. […]