Research team Spinorbitronics, within the Concepts group
Optical access of magnetic tunnel junctions for future hybrid spintronic–photonic memory circuits (August 24th, 2020)
We demonstrate in this study a fabrication process that enables the realization of a top transparent conductive electrode of magnetic tunnel junctions (MTJs), building blocks of magnetic random access memories (MRAMs). This work opens up the realization of future and faster nonvolatile memories based on hybrid spintronic photonic circuits. This new process has been electrically […]
Read moreMagnetic skyrmions are topologically protected spin textures of great interest for nanoscale information storage and processing. However, stabilizing small skyrmions without applying an external magnetic field remains challenging. This study employs a thin ferromagnetic layer exchange-biased by an antiferromagnetic film to stabilize ferromagnetic skyrmions down to 30 nm in diameter, at zero magnetic field. In […]
Read moreSpintronique : technologie disruptive (Le Monde, blog Sciences2) (April 23rd, 2020)
Le blog Sciences2 du journal Le Monde du 23 avril 2020 La nouvelle nous vient de la revue Nature de ce matin. Où une équipe française annonce une rupture énergétique en micro-électronique. Et plus exactement en spintronique, la technologie des mémoires de vos téléphones portables et ordinateurs qui a valu son prix Nobel de Physique […]
Read moreReducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy (April 01st, 2020)
MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]
Read morePost-doctoral position – Current induced dynamics of the magnetic skyrmions (March 26th, 2020)
Spintec invites application for postdoctoral positions in spintronics on magnetic skyrmions. Magnetic skyrmions are nm scale topological spin texture that hold great promise for storing and manipulating the information at the nanoscale. Spintec has recently demonstrated magnetic skyrmions at room temperature in ultrathin nanostructures [1] and their manipulation using gate electric field[2,3], electric current [4] […]
Read morePost-doctoral position – Spintronic devices based on magnetic skyrmions (March 04th, 2020)
Design of memory and logic devices based on magnetic skyrmions Spintec invites applications for a postdoctoral fellowship on the design of memory and logic devices based on magnetic skyrmions. Magnetic skyrmions are topological spin textures that show great promise for storing and manipulating information at the nanoscale. Logic and memory devices have recently been proposed […]
Read moreSelf-induced spin-charge conversion in ferromagnetic thin films (February 28th, 2020)
The generation of a spin current and its further conversion to a charge current have attracted considerable attention, facilitating advances in basic physics along with the emergence of closely related applications in the field of spintronics. In this study, we experimentally and theoretically demonstrated the self-induced inverse spin Hall effect for spin-charge conversion, triggered by […]
Read morePost-doc in spintronics on the modeling of magnetic skyrmions (December 16th, 2019)
Contract Period : 24 months Expected date of employment : 1 March 2020 Mission: Spintec is calling for applications for a postdoctoral fellowship in spintronics on magnetic skyrmions. Magnetic skyrmions are topological spin textures that are promising for storing and manipulating information at the nanoscale. Spintec has recently demonstrated magnetic skyrmions at room temperature in […]
Read moreSeminar – Spin Hall magnetoresistance in disordered magnetic insulator/metal heterostructures (December 16th, 2019)
On February 6th at 15:00, we have the pleasure to welcome Richard Schlitz from Technische Universität Dresden (Germany). He will give us a seminar at CEA/SPINTEC (*) Bat 1005, room 445, entitled : Spin Hall magnetoresistance in disordered magnetic insulator/metal heterostructures The spin Hall magnetoresistance (SMR) can be used as powerful tool to investigate the […]
Read moreSpintronic memristor based on an isotropically coercive magnetic layer (December 03rd, 2019)
We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and integrated it in a full nanosized magnetic tunnel junction pillar. In parallel, we developed a model describing the magnetization dynamics […]
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