Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

Spintec invites application for postdoctoral positions in spintronics on electrical control of magnetic skyrmions. Magnetic skyrmions are nontrivial spiral spin textures considered as potential building blocks for ultrafast and power efficient spintronic memory and logic devices. Controlling their chirality would provide an additional degree of freedom and enable new functionalities in these devices. Achieving such […]

Antaios announced on September 16, 2020 that is has secured 11 million dollars in funding to accelerate innovation and develop new strategic partnerships. Antaios is a start-up founded in 2017 on the basis of a decade of pioneering work carried out at Spintec on SOT-MRAM. Antaios is fully engaged in bringing the SOT-MRAM technology to […]

You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2021. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship. You may download the […]

We demonstrate in this study a fabrication process that enables the realization of a top transparent conductive electrode of magnetic tunnel junctions (MTJs), building blocks of magnetic random access memories (MRAMs). This work opens up the realization of future and faster nonvolatile memories based on hybrid spintronic photonic circuits. This new process has been electrically […]

Magnetic skyrmions are topologically protected spin textures of great interest for nanoscale information storage and processing. However, stabilizing small skyrmions without applying an external magnetic field remains challenging. This study employs a thin ferromagnetic layer exchange-biased by an antiferromagnetic film to stabilize ferromagnetic skyrmions down to 30 nm in diameter, at zero magnetic field. In […]

Le blog Sciences2 du journal Le Monde du 23 avril 2020 La nouvelle nous vient de la revue Nature de ce matin. Où une équipe française annonce une rupture énergétique en micro-électronique. Et plus exactement en spintronique, la technologie des mémoires de vos téléphones portables et ordinateurs qui a valu son prix Nobel de Physique […]

MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

Spintec invites application for postdoctoral positions in spintronics on magnetic skyrmions. Magnetic skyrmions are nm scale topological spin texture that hold great promise for storing and manipulating the information at the nanoscale. Spintec has recently demonstrated magnetic skyrmions at room temperature in ultrathin nanostructures [1] and their manipulation using gate electric field[2,3], electric current [4] […]

Design of memory and logic devices based on magnetic skyrmions Spintec invites applications for a postdoctoral fellowship on the design of memory and logic devices based on magnetic skyrmions. Magnetic skyrmions are topological spin textures that show great promise for storing and manipulating information at the nanoscale. Logic and memory devices have recently been proposed […]