MRAM MEMORIES



Research team MRAM memories, within the Devices group


Topic Classical microelectronics is reaching its limits of downward scalability, reaching technological or scientific bottlenecks. Magnetic random access memories, based on magnetic tunnel junctions storing and reading bits of information, are emerging key ICT components. They are of immediate relevance for low-power and high-speed processor and mass-storage cache memory. Similar to other technologies, ways are […]

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Investigation of magnetization dynamics spin transfer torque driven reversal in perpendicular shape anisotropy magnetic tunnel junctions   Spin Transfer Torque Random Access Memories (STTRAM) are focusing an increasing interest in microelectronics industry due to their non-volatility, speed, density, downsize scalability below 20nm nodes, infinite endurance plus radiation hardness. Major microelectronics companies are aiming to introduce […]

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Measured switching diagrams of perpendicular magnetic tunnel junctions exhibit unexpected behavior at high voltages associated with significant heating of the storage layer. The boundaries deviate from the critical lines corresponding to the coercive field, which contrasts with the theoretically predicted behavior of a standard macrospin-based model. In this paper, we are proposing a modified model […]

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On January 29, we have the pleasure to welcome Stephane Mangin from Institut Jean Lamour, Univ. de Lorraine, Nancy, France. He will give us a seminar at 11:00, CEA/Spintec, Bat. 1005, room 434A entitled : All-optical magnetization switching in spin-valve structure mediated by spin-polarized hot electron transport S. Iihama1,2, Y. Xu1, M. Deb1, G. Malinowski1, […]

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We are looking for a post doctoral researcher to work on a project focused on measuring the magnetic fields and their stability in magnetic memory devices. The candidate will act as the liaison between Spintec in Grenoble (Pure research on magnetic devices) with CEA LETI (microelectronics) on a project which aims to bring these memories […]

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On Wednsday 5 december, Luc TILLIE defends his PhD at 14h00 in room Chrome 1 of Maison Minatec – 3, Parvis Louis Néel, 38054 GRENOBLE Cedex . Luc TILLIE, will defend his thesis, jointly carried out by LETI/DCOS/SCME/LCM and SPINTEC, entitled : « Study and optimization of thermal stability and temperature dependence of P-STTMRAM for industrial […]

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On december 05, We have the pleasure to welcome professor Lionel TORRES from Polytech Montpellier, Université de Montpellier. He comes at Grenoble for the PHD defense of Luc TILLIE at 14H. He kindly takes this opportunity to give us a seminar at 10:15, CEA/Spintec, Bat. 1005, room 434A entitled : “Normally-off“ Computing for Smart Systems […]

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Due to the nanometer size of magnetic tunnel junctions and high interfacial resistance of ultrathin MgO tunnel barriers, temperature modulation at GHz frequency can be achieved in these devices and efficiently use to amplify microwaves in spintronics oscillators. Spintronics oscillators use two major phenomena discovered in spin-electronics: the tunnel magnetoresistance of magnetic tunnel junctions (MTJ) […]

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Heat assisted magnetic recording (HAMR) is a new hard disk drive (HDD) recording technology which uses a temporary near field heating of the media during write to increase hard disk drive storage density. It has been under development in HDD industry for more than 10 years. A phenomenon totally overlooked during the past development of […]

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Bernard DIENY receives the 2018 IEEE Carrier Achievement Award for contributions to spintronics applications including spin-valves and MRAMs and for strengthening the relationship between magnetics and microelectronics communities. The Award will be handed out at the upcoming MMM/Intermag conference in Washington in January 2019. Through this award Bernard Diény becomes a life member in the […]

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