MRAM



Research team MRAM memories, within the Devices group


Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

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ERC Proof of Concept grant MAGALIGN is awarded in the framework of ERC Project MAGICAL The launching of a new generation of spintronic memory (STT-MRAM) in volume production in 2019 by all major microelectronics companies marks the adoption of spintronics by microelectronics industry. This constitutes a major milestone in the field. SPINTEC largely contributed to […]

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You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2021. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship. You may download the […]

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We demonstrate in this study a fabrication process that enables the realization of a top transparent conductive electrode of magnetic tunnel junctions (MTJs), building blocks of magnetic random access memories (MRAMs). This work opens up the realization of future and faster nonvolatile memories based on hybrid spintronic photonic circuits. This new process has been electrically […]

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The European consortium SpintronicFactory, largely supported by the French laboratories Spintec (Grenoble) and the CNRS-Thales Joint Lab (Palaiseau), publishes in the journal Nature Electronics an ambitious roadmap for spintronics. This discipline on the borderline between magnetism and microelectronics is indeed reaching maturity, offering broad prospects for innovation. B. Dieny, I. L. Prejbeanu, K. Garello, P. […]

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Kevin GARELLO joins SPINTEC

We are pleased to announce the arrival on June 2, 2020 of Kevin Garello at SPINTEC. Kevin comes from IMEC Belgium, where he was in charge of exploratory magnetic memory activities, being in addition the leader of spintronic work package for Graphene Flagship. Within the MRAM team, Kevin will bring his vision and know-how of […]

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This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]

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MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

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L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique [Made in France] La pépite Antaïos réinvente la mémoire magnétique Hprobe, la pépite française qui veut accélérer le test de mémoires et capteurs […]

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Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in a diffusive regime which involves numerous individual scattering events. Consequently, although the time scale of elastic electron scattering in metals […]

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