MRAM



Research team MRAM memories, within the Devices group


Electronics of the future

The journal of the French Society for electricity, electronics and information technologies (Société de l’électricité, de l’électronique et des technologies de l’information et de la communication) dedicated a special issue to Electronics of the future (in French). Lucian Prejbeanu and Bernard Diény, from SPINTEC, authored an article on new concepts of ultrafast and highly scalable […]

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On Monday July 1 at 14:00 we have the pleasure to welcome Kevin Garello from Imec, Belgium. He will give us a seminar at CEA/IRIG, Bat 1005, room 445 entitled : SOT-MRAM: from fundamentals to large scale technology integration Microelectronics industry is facing major challenges related to the volatility of CMOS cache memory elements (usually […]

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Topic Classical microelectronics is reaching its limits of downward scalability, reaching technological or scientific bottlenecks. Magnetic random access memories, based on magnetic tunnel junctions storing and reading bits of information, are emerging key ICT components. They are of immediate relevance for low-power and high-speed processor and mass-storage cache memory. Similar to other technologies, ways are […]

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Investigation of magnetization dynamics spin transfer torque driven reversal in perpendicular shape anisotropy magnetic tunnel junctions   Spin Transfer Torque Random Access Memories (STTRAM) are focusing an increasing interest in microelectronics industry due to their non-volatility, speed, density, downsize scalability below 20nm nodes, infinite endurance plus radiation hardness. Major microelectronics companies are aiming to introduce […]

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Measured switching diagrams of perpendicular magnetic tunnel junctions exhibit unexpected behavior at high voltages associated with significant heating of the storage layer. The boundaries deviate from the critical lines corresponding to the coercive field, which contrasts with the theoretically predicted behavior of a standard macrospin-based model. In this paper, we are proposing a modified model […]

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On January 29, we have the pleasure to welcome Stephane Mangin from Institut Jean Lamour, Univ. de Lorraine, Nancy, France. He will give us a seminar at 11:00, CEA/Spintec, Bat. 1005, room 434A entitled : All-optical magnetization switching in spin-valve structure mediated by spin-polarized hot electron transport S. Iihama1,2, Y. Xu1, M. Deb1, G. Malinowski1, […]

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We are looking for a post doctoral researcher to work on a project focused on measuring the magnetic fields and their stability in magnetic memory devices. The candidate will act as the liaison between Spintec in Grenoble (Pure research on magnetic devices) with CEA LETI (microelectronics) on a project which aims to bring these memories […]

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On Wednsday 5 december, Luc TILLIE defends his PhD at 14h00 in room Chrome 1 of Maison Minatec – 3, Parvis Louis Néel, 38054 GRENOBLE Cedex . Luc TILLIE, will defend his thesis, jointly carried out by LETI/DCOS/SCME/LCM and SPINTEC, entitled : « Study and optimization of thermal stability and temperature dependence of P-STTMRAM for industrial […]

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On december 05, We have the pleasure to welcome professor Lionel TORRES from Polytech Montpellier, Université de Montpellier. He comes at Grenoble for the PHD defense of Luc TILLIE at 14H. He kindly takes this opportunity to give us a seminar at 10:15, CEA/Spintec, Bat. 1005, room 434A entitled : “Normally-off“ Computing for Smart Systems […]

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Due to the nanometer size of magnetic tunnel junctions and high interfacial resistance of ultrathin MgO tunnel barriers, temperature modulation at GHz frequency can be achieved in these devices and efficiently use to amplify microwaves in spintronics oscillators. Spintronics oscillators use two major phenomena discovered in spin-electronics: the tunnel magnetoresistance of magnetic tunnel junctions (MTJ) […]

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