SPINTEC is opening a tenured assistant professor/lecturer position in the field of frugal digital electronics, design of embedded systems, design of digital architectures in disruptive technologies (MCF section 61-63). The recruited person will carry out his research at SPINTEC Laboratory affiliated with UGA, CEA, CNRS, Grenoble INP-UGA in a very promising field, linked to […]

  Spin-torque-nanodiodes based on magnetic tunnel junctions are promising candidates for RF energy harvesters and ultra-low power wake-up receivers with performances that are expected to surpass those of semiconductor diodes. Experiments on magnetic tunnel junctions with perpendicular magnetic anisotropy show how the performances can be optimized upon reducing the magnetic layer thickness and the device […]

  We have investigated the use of spintronic devices to enable the implementation of a Binary Ensemble Convolutional Neural Network. A simulation flow has been setup and allowed to evaluate this disruptive combination and very promising results have been obtained in terms of hardware optimization and power reduction. The use of emerging technologies has been […]

  Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. A consortium of physicists at SPINTEC, JGU Berlin and Charles University Prague established the essential role of interfaces for spin current injection and spin current-to-charge current conversion, from the gigahertz (GHz) diffusive to […]

Magnetic skyrmions are appealing for use in logic and memory devices combining small size and fast motion. Here, we propose to exploit skyrmion interactions to perform both logic and memory operations at the nanoscale. Our concept opens a path for novel devices which intrinsically merge high-density non-volatile data storage with computing capabilities. a. Schematic representation […]

Y. Fu, J. Li, J. Papin, P. Noël, S. Teresi, M. Cosset-Chéneau, C. Grezes, T. Guillet, C. Thomas, Y.-M. Niquet, P. Ballet, T. Meunier, J.-P. Attané, A. Fert, and L. Vila, Nano Lett. 22, 7867 (2022).   We report the observation of this bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that […]

Context: CEA has recently committed to an ambitious, long-term, EU-driven research project focused on materials innovation in order to implement green and digital transitions in a sustainable way and inclusive for society. The accelerated development of 2D materials answers the need for innovative spintronics with controlled amounts of materials. An essential aspect is getting closer […]

Title: Design for memory/logic devices Keywords: Design, post-CMOS electronics, spintronics, architectures, ferroelectrics, magneto-electric spin-orbit Summary:Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. As recently demonstrated by Intel, this makes ferroelectrics good candidates for ultralow-power post-CMOS […]

Keywords: Microelectronics, spintronics, ferroelectrics, Fe-RAM, Fe-FET, Design, post-CMOS electronics Summary: Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. This makes ferroelectrics good candidates for ultralow-power neuromorphic AI architectures. We recently demonstrated in a Nature article […]

Perpendicular-shape-anisotropy magnetic random-access memory (PSA MRAM) has been proposed to maintain the thermal stability of solid-state magnetic bits down to a few nanometers in diameter. Here we confirm directly with high-spatial resolution and high-sensitivity electron holography that magnetization is weakly affected by temperature, in contrast with the conventional ultrathin MRAM cells. Magnetic random-access memory (MRAM) […]