Y. Fu, J. Li, J. Papin, P. Noël, S. Teresi, M. Cosset-Chéneau, C. Grezes, T. Guillet, C. Thomas, Y.-M. Niquet, P. Ballet, T. Meunier, J.-P. Attané, A. Fert, and L. Vila, Nano Lett. 22, 7867 (2022).   We report the observation of this bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that […]

Context: CEA has recently committed to an ambitious, long-term, EU-driven research project focused on materials innovation in order to implement green and digital transitions in a sustainable way and inclusive for society. The accelerated development of 2D materials answers the need for innovative spintronics with controlled amounts of materials. An essential aspect is getting closer […]

Title: Design for memory/logic devices Keywords: Design, post-CMOS electronics, spintronics, architectures, ferroelectrics, magneto-electric spin-orbit Summary:Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. As recently demonstrated by Intel, this makes ferroelectrics good candidates for ultralow-power post-CMOS […]

Keywords: Microelectronics, spintronics, ferroelectrics, Fe-RAM, Fe-FET, Design, post-CMOS electronics Summary: Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. This makes ferroelectrics good candidates for ultralow-power neuromorphic AI architectures. We recently demonstrated in a Nature article […]

Perpendicular-shape-anisotropy magnetic random-access memory (PSA MRAM) has been proposed to maintain the thermal stability of solid-state magnetic bits down to a few nanometers in diameter. Here we confirm directly with high-spatial resolution and high-sensitivity electron holography that magnetization is weakly affected by temperature, in contrast with the conventional ultrathin MRAM cells. Magnetic random-access memory (MRAM) […]

Context. Spintronics has become a mature technology for applications, such as magnetic field sensing and solid-state memories. However, existing concepts are almost exclusively based on planar processes such as thin film deposition and patterning. Extending spintronics to 3D devices would provide new integrated functionalities such as three-dimensional magnetic field sensors, and also open prospects for […]

Context: In the frame of different European and French national projects, SPINTEC has several openings for postdoctoral positions. The projects consider memory, microwave and sensor functionalities to develop novel hardware concepts for unconventional computing, to demonstrate wireless communications applications and to develop novel concepts for wide-range magnetic field sensors. Position: The tasks include nanofabrication of […]

MNEMOSYN stands for « 2D MagNEtic meMOries: Scalable growth and hYbrid electrical operatioN ». It is 36-months-long FLAG-ERA Graphene Basic Research project. MNEMOSYN will develop and optimize techniques to grow large-scale 2D magnets, co-integrated with strong spin-orbit coupling materials, graphene and 2D ferroelectrics in multilayered van der Waals heterostructures. The main objective is to demonstrate […]

SPINTEC is opening a 2-year post-doctoral position on modelling of all optical switching using light carrying orbital momentum Context: The manipulation of magnetization by ps or fs light pulses has become a very exciting topic nowadays opening routes towards ultrafast magnetization control. To date, most of the light-spin interaction studies made use of spin angular […]

SPINTEC is celebrating its 20th anniversary in 2022. We will celebrate this anniversary by organizing a dedicated day on May 10, 2022, retracing this scientific and human adventure. The event will bring together, at the Minatec amphitheater in Grenoble, laboratory staff, present or alumni, institutions, colleagues from other laboratories, industrial partners. For this special occasion, […]