Spin-transport in antiferromagnets from the GHz to THz regime (December 12th, 2022)
Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. A consortium of physicists at SPINTEC, JGU Berlin and Charles University Prague established the essential role of interfaces for spin current injection and spin current-to-charge current conversion, from the gigahertz (GHz) diffusive to […]
Read moreComputing and storing data at the nanoscale using magnetic skyrmions (December 08th, 2022)
Magnetic skyrmions are appealing for use in logic and memory devices combining small size and fast motion. Here, we propose to exploit skyrmion interactions to perform both logic and memory operations at the nanoscale. Our concept opens a path for novel devices which intrinsically merge high-density non-volatile data storage with computing capabilities. a. Schematic representation […]
Read moreBilinear magnetoresistance in HgTe topological insulator (December 05th, 2022)
Y. Fu, J. Li, J. Papin, P. Noël, S. Teresi, M. Cosset-Chéneau, C. Grezes, T. Guillet, C. Thomas, Y.-M. Niquet, P. Ballet, T. Meunier, J.-P. Attané, A. Fert, and L. Vila, Nano Lett. 22, 7867 (2022). We report the observation of this bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that […]
Read moreOne year post-doctoral position: short-loop approach for MBE-grown FCGT 2D materials studied by ARPES microscopy (SPINTEC/LETI) (December 01st, 2022)
Context: CEA has recently committed to an ambitious, long-term, EU-driven research project focused on materials innovation in order to implement green and digital transitions in a sustainable way and inclusive for society. The accelerated development of 2D materials answers the need for innovative spintronics with controlled amounts of materials. An essential aspect is getting closer […]
Read moreR&D Engineer position proposal (September 12th, 2022)
Title: Design for memory/logic devices Keywords: Design, post-CMOS electronics, spintronics, architectures, ferroelectrics, magneto-electric spin-orbit Summary:Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. As recently demonstrated by Intel, this makes ferroelectrics good candidates for ultralow-power post-CMOS […]
Read morePost-doctoral position: development of hybrid ferroelectric-spintronics memories and post-CMOS devices (September 08th, 2022)
Keywords: Microelectronics, spintronics, ferroelectrics, Fe-RAM, Fe-FET, Design, post-CMOS electronics Summary: Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. This makes ferroelectrics good candidates for ultralow-power neuromorphic AI architectures. We recently demonstrated in a Nature article […]
Read morePerpendicular-shape-anisotropy MRAM do not fear temperature (September 01st, 2022)
Perpendicular-shape-anisotropy magnetic random-access memory (PSA MRAM) has been proposed to maintain the thermal stability of solid-state magnetic bits down to a few nanometers in diameter. Here we confirm directly with high-spatial resolution and high-sensitivity electron holography that magnetization is weakly affected by temperature, in contrast with the conventional ultrathin MRAM cells. Magnetic random-access memory (MRAM) […]
Read moreOne year post-doctoral fellowship on domain walls and spin waves in core-shell magnetic nanowires (August 05th, 2022)
Context. Spintronics has become a mature technology for applications, such as magnetic field sensing and solid-state memories. However, existing concepts are almost exclusively based on planar processes such as thin film deposition and patterning. Extending spintronics to 3D devices would provide new integrated functionalities such as three-dimensional magnetic field sensors, and also open prospects for […]
Read more[POSITION FILLED] Post-doctoral position (August 04th, 2022)
Context: In the frame of different European and French national projects, SPINTEC has several openings for postdoctoral positions. The projects consider memory, microwave and sensor functionalities to develop novel hardware concepts for unconventional computing, to demonstrate wireless communications applications and to develop novel concepts for wide-range magnetic field sensors. Position: The tasks include nanofabrication of […]
Read moreMNEMOSYN – FLAG-ERA Graphene Basic Research project (July 04th, 2022)
MNEMOSYN stands for « 2D MagNEtic meMOries: Scalable growth and hYbrid electrical operatioN ». It is 36-months-long FLAG-ERA Graphene Basic Research project. MNEMOSYN will develop and optimize techniques to grow large-scale 2D magnets, co-integrated with strong spin-orbit coupling materials, graphene and 2D ferroelectrics in multilayered van der Waals heterostructures. The main objective is to demonstrate […]
Read more