Magnetic Origami Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. Mihai MIRON The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects. Unfortunately, the functionality […]

Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher than that of traditional metallic cobalt/platinum multilayers that are being researched for this property. In a material with a […]

Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015)    

Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications

Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.

Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction

We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0

M. Kanoun, R. Benabderrahmane, C. Duluard, C. Baraduc, N. Bruyant, A. Bsiesy, Carrier transport mechanism across tunnel dielectric barrier separating a ferromagnet from silicon is an important issue for spin-polarised electrons injection into non magnetic semiconductors. Direct tunnelling of electrons between the ferromagnet and the silicon energy bands is a prerequisite for spin conservation through […]

I.-M. Miron, T. Moore, P.-J. Zermatten, G. Serret, S. Auffret, B. Rodmacq, G. Gaudin, A. Schuhl Controlling locally the motion of magnetic domain walls (DW) by a spin polarized current would lead to new applications in spintronics devices. Up to now, it has been mainly studied in materials with in-plane magnetization. However the diffi- culty […]

Akmaldinov, Kamil (2015). Download

Hybrid STT/CMOS design of an interrupt-based instant on/off mechanism for low-power SoC, Layer, C., Dieny, B., Becker, L., Jabeur, K., Gros, S., Paoli, P., Javerliac, V., Bernard-Granger, F., xx, yy (2015)

Low-power hybrid STT/CMOS systems-on-chip embedding non-volatile magnetic memory blocks, Layer, C., Dieny, B., Becker, L., Jabeur, K., Gros, S., Paoli, P., Javerliac, V., Bernard-Granger, F., xx, yy (2015)