Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications

Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.

Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction

We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0

M. Kanoun, R. Benabderrahmane, C. Duluard, C. Baraduc, N. Bruyant, A. Bsiesy, Carrier transport mechanism across tunnel dielectric barrier separating a ferromagnet from silicon is an important issue for spin-polarised electrons injection into non magnetic semiconductors. Direct tunnelling of electrons between the ferromagnet and the silicon energy bands is a prerequisite for spin conservation through […]

I.-M. Miron, T. Moore, P.-J. Zermatten, G. Serret, S. Auffret, B. Rodmacq, G. Gaudin, A. Schuhl Controlling locally the motion of magnetic domain walls (DW) by a spin polarized current would lead to new applications in spintronics devices. Up to now, it has been mainly studied in materials with in-plane magnetization. However the diffi- culty […]

Akmaldinov, Kamil (2015). Download

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