The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

Special issue on Spintronics, published in the proceedings of the IEEE, vol.104 (10), October 2016 Editors: Hideo Ohno, Mark Stiles, Bernard Dieny

Magnonic is an emerging research field, which aims at exploiting the transport of pure spin current in magnetic materials. The elementary excitations are the propagating spin-waves, also called magnons, which are bosonic quasiparticles. The advantages over conventional electronic devices are a significant reduction in energy consumption thanks to the absence of Joule heating, as well as new features taking […]

A CoFe based ferromagnetic alloy has been used in lateral spin valves to replace NiFe alloys, which are overwhelmingly exploited as ferromagnets electrodes in lateral spintronic devices. By using this second material, emitted signals are found to be one order of magnitude larger. In addition to using the electric charge of the electron, spintronic technologies […]

Bringing a ferromagnetic layer to resonance creates non-equilibrium magnetization dynamics which generates a spin current. The spin current propagates from the ferromagnet into a neighboring layer if permitted by the interface. This is equivalent to saying that the air-flow generated by rotating the blades of a fan can propagate in a neighboring room if the […]

Ces structures magnétiques nanométriques ont été observées à températures ambiante dans des matériaux compatibles avec l’industrie électronique. Ces résultats font sauter un verrou important quant à l’utilisation des skyrmions comme vecteur d’information à l’échelle nanométrique dans nos ordinateurs.

Magnetic Origami Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. Mihai MIRON The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects. Unfortunately, the functionality […]

Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher than that of traditional metallic cobalt/platinum multilayers that are being researched for this property. In a material with a […]

Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015)    

Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications

Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.