B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to […]

Advancing spintronic devices requires using novel 2D materials including graphene with featured properties. In particular, a significant effort has been focused on injecting spins and inducing magnetism in graphene giving rise to emerging field of graphene spintronics. It is demonstrated that robust spin polarization can be induced in graphene via proximity with magnetic insulators including […]

We have developed arrays of innovative magnetic nanotweezers or “nanojaws” on silicon wafers, by a top-down approach using the fabrication techniques of microelectronics. The mechanical manipulation of micro- and nanometric objects relies on constantly evolving techniques, which are of great interest to the life sciences and biotechnologies. Numerous biomedical studies, either fundamental or applied to […]

Amalio Fernandez-Pacheco, Robert Streubel, Olivier Fruchart, Riccardo Hertel, Peter Fischer, Russell P. Cowburn, Nature Comm. 8, 15756 (2017) Magnetic nanostructures are being developed for use in many aspects of our daily life, spanning areas such as data storage, sensing and biomedicine. Whereas patterned nanomagnets are traditionally two-dimensional planar structures, recent work is expanding nanomagnetism into […]

At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system. By using a dynamical spin injection technique, we were able to demonstrate a record conversion yield between spin and charge current in this system, moreover that is tunable in amplitude and sign by an electrostatic gate, a premiere. […]

We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]

We have created an analytical model of spin waves in microscopic spin-wave waveguides in the presence of interfacial Dzyaloshinskii-Moriya interaction. By comparing to micromagnetic simulations, we have demonstrated that spatially periodic excitation sources can be used to create a uni-directional spin-wave-emission source whose properties can be predicted by our model. Since miniaturization of CMOS devices […]

Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research. Several factors are considered for sensors such as spatial resolution, sensitivity, linear response, required proximity to the sample, as well as the ability to filter noise and […]

We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]