MRAM



Research team MRAM memories, within the Devices group


L’alliance de la microélectronique et du magnétisme, ou spintronique, s’avère prometteuse. Les géants du secteur s’intéressent notamment aux mémoires magnétiques. Industrie et Technologies 1007, 1st March 2018 [French]

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On March 29, We have the pleasure to welcome Stéphane MANGIN from Institut Jean Lamour, Université de Lorraine. He comes at Grenoble for the PHD defense of Jyotirmoy Chatterjee at 14H. He kindly offered to take this opportunity to give us a seminar which will take place at SPINTEC room 434A at 11:00 Since the […]

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IEDM is the main annual conference of the IEEE Electron Devices Society. It took place in San Francisco, 4-6 December 2017. Since 2016, IEEE EDS and IEEE Magnetics Society have been collaborating on the organization of joint events gathering experts in microelectronics and magnetism. With the rising interest of the microelectronics industry for the emerging […]

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On December 4,  we have the pleasure to welcome Marwan Deb from Université de Lorraine, France. At 11H, he will give a seminar on “Ultrafast Magnetization Manipulation in Multisublattice Magnets” in room 434A. Femtomagnetism is a relatively new and rapidly growing area of research that focuses on the ultrafast magnetization dynamics driven by fs laser […]

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The stiffening of the perpendicular magnetic tunnel junction (pMTJ) stack resulting from the W insertion due to its very high melting temperature, is the key mechanism behind the extremely high thermal robustness. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode of pMTJ stack highly robust against annealing up to […]

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You find here the list of proposals for Master-2 internships to take place during Spring 2018. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]

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B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, […]

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The medal of innovation of CNRS is granted yearly to one or a few persons having conducted ground-breaking research, which led to key innovation in technology, life or social sectors. Since 2011, this distinction has been awarded for outstanding scientific research leading to a remarkable innovation, whether in the technological, therapeutic or societal fields. Jean-Pierre […]

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In the frame of our ELECSPIN ANR project [1], we have an open position for a 12 months post-doc position. ELECSPIN project aims at developing spintronics devices based on manipulating magnetic properties by an electric field in oxides/ferromagnetic metal structures. The goal is to develop electric field assisted spin-transfer torque magnetic random access memories (STT-MRAM) […]

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on July, 12th, 14H, Steven Lequeux from Spintec, will give a seminar on “Neuromorphic computing : From a memristive device to the learning process”. The seminar will take place in Building 10.05, room 434. In the current context of information technology, the sequential processing carried out by classical computer architectures stumbles on problems of energy […]

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