The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
CMOS Integration for Non-Volatile Logic
The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.
Thermally Assisted Switching
Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.
- Nikita STRELKOV (2016-2019)
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- Hieu Tan NGUYEN (2013-2016)
- Jyotirmoy CHATTERGEE (2014-2017)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- Electronique – Ruée sur les mémoires magnétiques (Industrie et Technologies, Mar 2018) (April 04th, 2018)
L’alliance de la microélectronique et du magnétisme, ou spintronique, s’avère prometteuse. Les géants du secteur s’intéressent notamment aux mémoires magnétiques. Industrie et Technologies 1007, 1st March 2018
- Seminar : Magnetisation manipulation with light and electrons femto-second pulses (February 23rd, 2018)
On March 29, We have the pleasure to welcome Stéphane MANGIN from Institut Jean Lamour, Université de Lorraine. He comes at Grenoble for the PHD defense of Jyotirmoy Chatterjee at 14H. He kindly offered to take ...
- Two very successful MRAM events organized by SPINTEC and the IEEE Magnetics Society at IEDM 2017 (January 24th, 2018)
IEDM is the main annual conference of the IEEE Electron Devices Society. It took place in San Francisco, 4-6 December 2017. Since 2016, IEEE EDS and IEEE Magnetics Society have been collaborating on the organization ...
- Seminar : Ultrafast Magnetization Manipulation in Multisublattice Magnets (November 27th, 2017)
On December 4, we have the pleasure to welcome Marwan Deb from Université de Lorraine, France. At 11H, he will give a seminar on “Ultrafast Magnetization Manipulation in Multisublattice Magnets” in room 434A. Femtomagnetism is a relatively ...
- Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer (November 15th, 2017)
The stiffening of the perpendicular magnetic tunnel junction (pMTJ) stack resulting from the W insertion due to its very high melting temperature, is the key mechanism behind the extremely high thermal robustness. Thicker W layer ...