MRAM

Overview

The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.

Research directions

Perpendicular Anisotropy Materials

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High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.

Perpendicular STT MRAM

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Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.

Nanofabrication Challenges

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Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.

Perpendicular Shape Anisotropy

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A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.

The team

Former members

Post-docs

  • Andrey TIMOPHEEV (2014-2017)
  • Van Dai NGUYEN (2016-2018)
  • J. Ranier Roiz (2015-2016)
  • Nikita Strelkov (2016-2019)

PhD

  • Luc TILLIE (2015-2018)
  • Nicolas PERRISSIN (2015-2018)
  • Jyotirmoy CHATTERGEE (2014-2017)
  • Hieu Tan NGUYEN (2013-2016)
  • Antoine Chavent (2013-2015)

Process Engineers

  • Jude GUELFFUCCI (2015-2017)
  • Nathalie LAMARD (2016-2017)
  • Guillaume LAVAITTE (2015-2016)

Projects

  • Samsung SGMI (2014-2017)
  • ANR Excalyb (2014-2017)
  • Heumem (2015-2018)
  • EU-FET Spice (2016-2019)
  • EU Great (2016-2019)
  • ERC Magical (2015-2020)

Partners

  • CEA LETI, Grenoble, France
  • Institut NEEL, Grenoble, France
  • Crocus Technology, Grenoble, France
  • Samsung, San Jose, USA
  • Singulus AG, Kahl am Main, Germany
  • Aarhus University, Aarhus, Denmark
  • Radboud Universiteit, Neijmegen, Netherlands

Recent news

  • COMRAD – An H2020 ITN project (January 16th, 2020) COMRAD - An H2020 ITN project
    Overview COMRAD is an H2020 ITN projet (2020-2024). It will explore novel routes for the fastest possible and least dissipative magnetic switching in random access devices by bringing together the two disciplines of ultrafast magnetism and ...
  • Spintronic memristor based on an isotropically coercive magnetic layer (December 03rd, 2019) Spintronic memristor based on an isotropically coercive magnetic layer
    We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and ...
  • Masters thesis projects for Spring 2020 (September 30th, 2019) Masters thesis projects for Spring 2020
    You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2020. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 ...
  • GMR Heads oral history panel at the Computer History Museum (September 29th, 2019) GMR Heads oral history panel at the Computer History Museum
    A GMR Heads oral history panel was held at the Computer History Museum, Mountain view, California, in May 2019. It celebrated the introduction of giant magnetoresistance (GMR) heads in hard disk drives in 1997, which ...
  • Seminar – Computing using magnetic random access memory (CRAM) and spin-orbit torque (SOT) memory cell (September 04th, 2019) Seminar - Computing using magnetic random access memory (CRAM) and spin-orbit torque (SOT) memory cell
    On Wednesday September 25 at 11:00 we have the pleasure to welcome Prof. Jian-Ping WANG (University of Minnesota, MN, USA). He will give us a seminar at CEA/IRIG, Bat 1005, room 445 entitled : Computing using ...

Publications

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