The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
CMOS Integration for Non-Volatile Logic
The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.
Thermally Assisted Switching
Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.
- Nikita STRELKOV (2016-2019)
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- Hieu Tan NGUYEN (2013-2016)
- Jyotirmoy CHATTERGEE (2014-2017)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- Masters thesis projects for Spring 2020 (September 30th, 2019)
You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2020. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 ...
- GMR Heads oral history panel at the Computer History Museum (September 29th, 2019)
A GMR Heads oral history panel was held at the Computer History Museum, Mountain view, California, in May 2019. It celebrated the introduction of giant magnetoresistance (GMR) heads in hard disk drives in 1997, which ...
- Seminar – Computing using magnetic random access memory (CRAM) and spin-orbit torque (SOT) memory cell (September 04th, 2019)
On Wednesday September 25 at 11:00 we have the pleasure to welcome Prof. Jian-Ping WANG (University of Minnesota, MN, USA). He will give us a seminar at CEA/IRIG, Bat 1005, room 445 entitled : Computing using ...
- Physicochemical origin of improved MRAM cells with W capping layer (August 20th, 2019)
Increasing the thermal budget beyond 400°C of magnetic random access memory (MRAM) cells is a major goal to allow for seamless conventional electronics integration. At these temperatures significant material diffusion can destroy the interface properties ...
- Seminar – Magnetic tunnel junctions using voltage control of the magnetic anisotropy for electric-field-controlled MRAM (July 26th, 2019)
Wednesday August 07 at 11:00 we have the pleasure to welcome Cécile Grezes, Electrical Engineering department, UCLA, Los Angeles. She will give us a seminar at CEA/SPINTEC, Bat 1005, room 434 entitled : Magnetic tunnel junctions ...