The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.

Research directions

Perpendicular Anisotropy Materials


High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.

Perpendicular STT MRAM


Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.

CMOS Integration for Non-Volatile Logic


The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.

Thermally Assisted Switching


Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.

The team

Permanent staff

Ricardo SOUSA

Bernard DIENY

Jean-Pierre NOZIERES



  • Nikita STRELKOV (2016-2019)


Process Engineers

Former members

  • Andrey TIMOPHEEV (2014-2017)
  • Van Dai NGUYEN (2016-2018)


  • Hieu Tan NGUYEN (2013-2016)
  • Jyotirmoy CHATTERGEE (2014-2017)
  • Luc TILLIE (2015-2018)
  • Nicolas PERRISSIN (2015-2018)

Process Engineers

  • Jude GUELFFUCCI (2015-2017)
  • Nathalie LAMARD (2016-2017)
  • Guillaume LAVAITTE (2015-2016)


  • Samsung SGMI (2014-2017)
  • ANR Excalyb (2014-2017)
  • Heumem (2015-2018)
  • EU-FET Spice (2016-2019)
  • EU Great (2016-2019)
  • ERC Magical (2015-2020)


  • CEA LETI, Grenoble, France
  • Institut NEEL, Grenoble, France
  • Crocus Technology, Grenoble, France
  • Samsung, San Jose, USA
  • Singulus AG, Kahl am Main, Germany
  • Aarhus University, Aarhus, Denmark

Recent news

  • Electronics of the future (June 19th, 2019) Electronics of the future
    The journal of the French Society for electricity, electronics and information technologies (Société de l’électricité, de l’électronique et des technologies de l’information et de la communication) dedicated a special issue to Electronics of the future ...
  • Seminar – SOT-MRAM: from fundamentals to large scale technology integration (June 14th, 2019) Seminar - SOT-MRAM: from fundamentals to large scale technology integration
    On Monday July 1 at 14:00 we have the pleasure to welcome Kevin Garello from Imec, Belgium. He will give us a seminar at CEA/IRIG, Bat 1005, room 445 entitled : SOT-MRAM: from fundamentals to large ...
  • PhD position [POSITION FILLED] – Exploring the scalability of spintronics for 3D devices (March 17th, 2019) PhD position [POSITION FILLED] – Exploring the scalability of spintronics for 3D devices
    Topic Classical microelectronics is reaching its limits of downward scalability, reaching technological or scientific bottlenecks. Magnetic random access memories, based on magnetic tunnel junctions storing and reading bits of information, are emerging key ICT components. They ...
  • Post doc position perpendicular shape anisotropy (March 07th, 2019) Post doc position perpendicular shape anisotropy
    Investigation of magnetization dynamics spin transfer torque driven reversal in perpendicular shape anisotropy magnetic tunnel junctions   Spin Transfer Torque Random Access Memories (STTRAM) are focusing an increasing interest in microelectronics industry due to their non-volatility, speed, ...
  • Impact of heating on the stability phase diagrams of perpendicular MTJs (February 19th, 2019) Impact of heating on the stability phase diagrams of perpendicular MTJs
    Measured switching diagrams of perpendicular magnetic tunnel junctions exhibit unexpected behavior at high voltages associated with significant heating of the storage layer. The boundaries deviate from the critical lines corresponding to the coercive field, which ...

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