Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces (August 30th, 2022)
A recent breakthrough in understanding the thermal effects on the magnetic properties of perpendicularly magnetized Fe/MgO interfaces is reported. It turns out that the macroscopic mechanisms play a decisive role in determining the thermal stability of magnetization in such structures. The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces(TM/Ox) is a key element in […]
Read moreReview – Two-dimensional materials prospects for non-volatile spintronic memories (August 17th, 2022)
H. Yang✉, S. O. Valenzuela✉, M. Chshiev, S. Couet, B. Dieny, B. Dlubak, A. Fert, K. Garello, M. Jamet, D.-E. Jeong, K. Lee, T. Lee, M.-B. Martin, G. S. Kar, P. Sénéor, H.-J. Shin, S. Roche✉, Nature 606, 663 (2022). In this Perspective article, an overview of the current developments and challenges in regard […]
Read morePEPR Electronics – Priority Programs and Equipment for Research (July 29th, 2022)
SPINTEC involved in the PEPR electronics recently funded by the French government in the framework of the national France 2030 strategy On July 12, 2022, the President of the Republic presented in Crolles the France 2030 national investment strategy for the electronics sector. France 2030 will dedicate more than 5 billion euros to support the […]
Read morePEPR SPIN – Priority Programs and Equipment for Exploratory Research (July 29th, 2022)
France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and Equipment for Exploratory Research (PEPR). Funded by France 2030, this action (€1 billion) aims to launch research programs in emerging scientific […]
Read moreSeminar – Spins, Bits, and Flips: Essentials for High-Density Magnetic Random-Access Memory (June 20th, 2022)
On Thursday, July 7 at 14:00 we have the pleasure to welcome Dr. Tiffany SANTOS from Western Digital Corporation, CA, USA. She is 2022 IEEE Magnetics Society Distinguished Lecturer and will give us a seminar entitled : Spins, Bits, and Flips: Essentials for High-Density Magnetic Random-Access Memory Place: SPINTEC, CEA/IRIG, Bat. 10.05, Room 445 Zoom […]
Read moreReview – The Magnetic Genome of Two-Dimensional van der Waals Materials (June 13th, 2022)
Q. H. Wang✉, A. Bedoya-Pinto, M. Blei, A. H. Dismukes, A. Hamo, S. Jenkins, M. Koperski, Y. Liu, Q.-Ch. Sun, E. J. Telford, H. H. Kim, M. Augustin, U. Vool, J.-X. Yin, L. H. Li, A. Falin, C. R. Dean, F. Casanova, R. F. L. Evans, M. Chshiev, A. Mishchenko, C. Petrovic, R. He, L. […]
Read moreReview – Oxide spin-orbitronics: spin-charge interconversion and topological spin textures (April 26th, 2022)
F. Trier, P. Noël, J.-V. Kim, J.-Ph. Attané, L. Vila & M. Bibes✉, Nature Reviews Materials 7, 258 (2022). In this Review, the recent advances in the new field of oxide spin-orbitronics including the control of spin–orbit-driven effects by ferroelectricity are surveyed, and the future perspectives for the field are discussed. Oxide materials possess […]
Read moreVan der Waals (vdW) layered magnets are promising materials to develop ultracompact and multifunctional spintronics devices. However, most of them are magnetic only at low temperature and are almost exclusively studied in the form of small flakes obtained by mechanical exfoliation. Here, we demonstrate the direct growth by molecular beam epitaxy of Fe5GeTe2, a room […]
Read morePlaidoyer pour la spintronique (January 28th, 2022)
Les Échos publie la tribune de Victoire de Margerie, fondatrice et vice-présidente du World Materials Forum, portant sur la spintronique et la nécessité d’industrialiser cette technologie de rupture pour gérer l’accroissement de données en limitant les dommages sur la planète. Technologie basée sur la rotation d’une particule sans consommation d’énergie, la spintronique pourrait “remplacer les […]
Read moreRoom-temperature ferroelectric switching of spin-to-charge conversion in GeTe (November 30th, 2021)
The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. Spintronics could potentially […]
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