Our team aims at manipulating spins currents in nanostructures, in particular in quantum materials with Dirac fermions, such as topological insulators or Weyl semimetals, or at oxide interfaces. Some important aspects of future spintronics devices, such as the efficient spin-charge interconversion at interfaces or the ballistic transport of spin states for quantum interconnects, are studied by magneto-transport measurements.
Nanostructure made of a horizontal stripe of spin Hall effect material, with two vertical ferromagnetic electrodes to probe the spin accumulation or to inject spin currents. The nanostructure allows probing both the charge-to-spin (left) and spin-to-charge (right) conversions due to the spin-orbit coupling.
Control of magnetization
Nanostructure possessing NiFe nanowires, in which magnetic domain walls can propagate. When located at the vicinity of the Cu nanowire, the domain wall can be used to inject or detect pure spin currents.
Ballistic spin currents
The ballistic surface Dirac fermions in a 3D topological insulator propagate on the cristal faces of a quantum wire. The well-defined cross section gives flux-periodic Aharonov-Bohm oscillations of the resistance, due to quantum interference, for a magnetic induction applied parallel to the nanowire. The spin-helical surface modes offer new possibilities to build quantum spintronics devices of simple geometry, either for dissipationless long-range interconnects or local spin filtering controled by a magnetic field or an electrostatic gate.
- Yu FU (2015-2016)
- Juan Carlos ROJAS SANCHEZ (2010-2013)
- Yu FU (2015-2016, 2018-2019)
- Andrei Mihai (2006-2009)
- Van Dai Nguyen (2009-2012)
- Piotr Laczkowski (2009-2012)
- Williams Savero-Torres (2011-2014)
- Pham Van Tuong (2014–2017)
- Gilles Zhand (2014-2017)
- Toshiki Gushi (2016-2019)
- Paul Noël (2016-2019)
- Aoyu Tan (2018-2021)
- Valentin Labracherie (2017-2021)
- Maxen Cosset-Cheneau (2019-2022)
- Sambit Ghosh (2019-2022)
- Williams Savero-Torres (2011)
- Gilles Zahnd (2014)
- Paul Noël (2016)
- Maxen Cosset-Cheneau (2018)
- Timothé Faivre (2009)
- Hélène Durand (2005)
- Andrei Mihai (2006)
- Carl Naylor (2011)
- Quentin Thiburce (2013)
- Clément Nguyen (2013)
- Sarah Ferry (2009)
- Cédric Mannequin (2008)
- Quentin Riffard (2010)
- Willy Lim (2016)
- Matthieu Praquin (2018)
- Marie-Paule Okinda (2020)
- Sara Varotto (2019-2020)
- ANR Contrabass (2020-2023)
- ITN H2020 Spears (2021-2024)
- ANR Oiso (2017-2021)
- ISP Idex UGA DOMINO (2018-2021)
- FET Proactive H2020 Tocha (2019-2023)
- IRS Idex UGA (2017-2020)
- Tsukuba University (Japan)
- Unité mixte de Physique CNRS/Thalès (Orsay)
- Néel Institute (Grenoble)
- Leti (Grenoble)
- Institut Jean Lamour (Nancy)
- Leibniz Institute IFW (Dresden)
- Technical University (Dresden)
- Post-doctoral position: development of hybrid ferroelectric-spintronics memories and post-CMOS devices (September 08th, 2022)
Keywords: Microelectronics, spintronics, ferroelectrics, Fe-RAM, Fe-FET, Design, post-CMOS electronics Summary: Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 ...
- PEPR SPIN – Priority Programs and Equipment for Exploratory Research (July 29th, 2022)
France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and ...
- Review – Oxide spin-orbitronics: spin-charge interconversion and topological spin textures (April 26th, 2022)
F. Trier, P. Noël, J.-V. Kim, J.-Ph. Attané, L. Vila & M. Bibes✉, Nature Reviews Materials 7, 258 (2022). In this Review, the recent advances in the new field of oxide spin-orbitronics including the control of ...
- Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe (November 30th, 2021)
The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling ...
- A new spintronic memristive component for neuromorphic circuits (November 18th, 2021)
Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses ...