Scientific highlights illustrated by key publications
- Magnetic Origami (January 08th, 2016)
Magnetic Origami Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. Mihai MIRON The magic about the art of paper folding is ... - Giant enhancement of magnetic effect will benefit spintronics (January 08th, 2016)
Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher ... - Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer (September 02nd, 2015)
Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015) - Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications (August 31st, 2015)
Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic ... - Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction (August 30th, 2015)
Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0 - SPIN-POLARISED TRANSPORT MECHANISMS AT THE FERROMAGNET/SILICON INTERFACE (July 02nd, 2015)
M. Kanoun, R. Benabderrahmane, C. Duluard, C. Baraduc, N. Bruyant, A. Bsiesy, Carrier transport mechanism across tunnel dielectric barrier separating a ferromagnet from silicon is an important issue for spin-polarised electrons injection into non magnetic semiconductors. ... - DOMAIN WALL MOTION IN PERPENDICULAR MAGNETIZED SAMPLES (July 02nd, 2015)
I.-M. Miron, T. Moore, P.-J. Zermatten, G. Serret, S. Auffret, B. Rodmacq, G. Gaudin, A. Schuhl Controlling locally the motion of magnetic domain walls (DW) by a spin polarized current would lead to new applications ... - Ferromagnetic/antiferromagnetic exchange bias nanostructures for ultimate spintronic devices (February 06th, 2015)
Akmaldinov, Kamil (2015). Download - Study of spin-orbit torque (SOT) and spin transfer torque (STT) magnetic tunnel junctions (MTJs) at advanced CMOS technology nodes (January 01st, 2015)
Study of spin-orbit torque (SOT) and spin transfer torque (STT) magnetic tunnel junctions (MTJs) at advanced CMOS technology nodes, Jabeur, K., di Pendina, G., Prenat, G., Microelectronics Journal, xx, yy (2015) - Hybrid STT/CMOS design of an interrupt-based instant on/off mechanism for low-power SoC (January 01st, 2015)
Hybrid STT/CMOS design of an interrupt-based instant on/off mechanism for low-power SoC, Layer, C., Dieny, B., Becker, L., Jabeur, K., Gros, S., Paoli, P., Javerliac, V., Bernard-Granger, F., xx, yy (2015) - Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications (January 01st, 2015)
Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications, Di Pendina, G., Zianbetov, E., Beigne, E., Journal of Applied Physics, 117, 4 (2015) - Low-power hybrid STT/CMOS systems-on-chip embedding non-volatile magnetic memory blocks (January 01st, 2015)
Low-power hybrid STT/CMOS systems-on-chip embedding non-volatile magnetic memory blocks, Layer, C., Dieny, B., Becker, L., Jabeur, K., Gros, S., Paoli, P., Javerliac, V., Bernard-Granger, F., xx, yy (2015) - Perpendicular magnetic tunnel junctions with a synthetic storage layer: A new route towards Pt-and Pd-free junctions (January 01st, 2015)
Perpendicular magnetic tunnel junctions with a synthetic storage layer: A new route towards Pt-and Pd-free junctions, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Scientific reports, xx, yy (2015) - High performance spin-orbit torque (SOT) based on non-volatile standard cell for hybrid CMOS/magnetic ICs (January 01st, 2015)
High performance spin-orbit torque (SOT) based on non-volatile standard cell for hybrid CMOS/magnetic ICs, Jabeur, K., di Pendina, G., Prenat, G., xx, yy (2015) - Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal (January 01st, 2015)
Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal, Cubukcu, M., Martin, M.B., Laczkowski, P., Vergnaud, C., Marty, A., Attané, J.-P., Seneor, P., Anane, A., Deranlot, C., Fert, A., Auffret, S., Ducruet, C., Notin, ...