The group covers all aspects of fundamental physics related to spin electronics by employing a wide range of theoretical approaches including ab initio, tight-binding, free electron and diffusive methods, combined with micromagnetic simulation approaches based on solution of Landau-Lifshitz-Gilbert (LLG) equation. This allows explaining experimental observations, providing solutions for specific problems and predicting novel properties and phenomena guiding the experimental work to optimize spintronic nanostructures.
Electronic structure and magnetic properties of materials from first principles
Ab initio calculations based on DFT are performed in order to provide insights into fundamental mechanisms of various spintronic phenomena, and to propose novel materials and their efficient combinations with required electronic structure and magnetic properties for optimal performance of spintronic devices.
Spin-dependent transport theories
We employ tight-binding, free electron and diffusive approaches including Green function techniques in the framework of Keldysh and Kubo formalisms, in order to describe spin and charge transport properties in magnetic nanostructures with non-collinear magnetic moments in vertical, lateral and complex geometries.
Theoretical concepts for organic and graphene spintronics
The goal of this topic is to harvest theoretically novel spin-dependent properties (e.g. proximity effects and defect induced magnetism etc.) in organic, graphene and related 2D materials based structures in the context of emerging field of graphene spintronics.
Magnetization dynamics (macrospin and micromagnetic) simulations under applied magnetic field and/or spin polarized currents are developed to address functionalities of spintronic devices (e.g. magnetization switching, synchronization and modulation for oscillators) in various geometries. Straightforward analytical models are developed to supplement fast and efficient understanding of the magnetization dynamics.
- Sergey NIKOLAEV (2015-2017)
- Debapriya CHAUDHURI (2016-2018)
- Cristian ORTIZ PAUYAC (2016-2017)
- Nikita STRELKOV (with MRAM Group, 2016-2019)
- Daniel SOLIS LERMA (2016-2019)
- Paulo COELHO (with Magnetic Sensors Group, 2014-2017)
- Brian CHARLES (with MRAM Group, 2016)
- EU FET FP7 and H2020 Flagship “Graphene” (2013-)
- EU M-ERA.NET HEUMEM supported via ANR-DFG (2014-2017)
- UGA Émergence et partenariat stratégique avec Western Digital (2015-2017)
- Samsung SGMI (2014-2017)
- ANR SOSPIN (2013-2016)
- ANR NMGEM (2010-2015)
- AGI14SMI15 AGIR (2014-2015)
- Transilvania University, Brasov, Romania
- CEA/LETI, Grenoble, France
- INAC/PHELIQS, Grenoble, France
- Institut Néel, Grenoble, France
- Unité Mixte Physique CNRS/Thalès, Palaiseau, France
- Laboratoire de Physique des Solides, Orsay, France
- IEF, Orsay, France
- Catalan Institute of Nanotechnology, Barcelona, Spain
- Institut Jean Lamour, Nancy, France
- Moscow Lomonosov State University, Moscow, Russia
- King Abdullah University of science and technology, Thuwal, Saudi Arabia
- University of Puerto Rico, San Juan, PR, USA
- Western Digital Corporation, CA, USA
- University of Bielefeld, Germany
- University of Kaiserslautern, Germany
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- ETH, Zurich, Switzerland
- Book – Introduction to Random-Access Memory (September 01st, 2017)
B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on ...
- MATEMAC3D – An ANR project (August 28th, 2017)
The objective of the project is to combine all key ingredients for modern Spintronics and SpinOrbitronics modeling within a novel and original non-commercial multi-physics software. These key ingredients are the appropriate spin transport equations that ...
- Review – Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (June 28th, 2017)
B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic ...
- Mairbek Chshiev elevated to Senior member of the IEEE (June 27th, 2017)
Prof. M. Chshiev is a theoretical physicist specializing on theory of spintronic phenomena in magnetic nanostructures and electronic structure of materials for spintronics. His background comprises both condensed matter theory and computational material science approaches ...
- Seminar : Spintronics with Ferroelectrics (June 21st, 2017)
On June 27 at 11h Prof. Evgeny Tsymbal from University of Nebraska will give a talk entitled “Spintronics with Ferroelectrics” Place : l’amphithéâtre Laurent Puech (2-D-004) in GreEN-ER building “Spintronics with Ferroelectrics” Ferroelectric materials are characterized ...