MRAM



Research team MRAM memories, within the Devices group


B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to […]

Read more

Nearly twenty scientists from SPINTEC participated in Intermag Dublin (24-28 April 2017), among which two thirds were PhD students and post-docs. Paul Noël was awarded a session poster prize (Large and tunable spin Hall angles in Au-based alloys: from intrinsic to side jump contributions), while Jyotirmoy Chatterjee was one of the five finalists for the […]

Read more

In the frame of our H2020 project GREAT we have one open position for a postdoc or term contract for 18 months to characterize the spin transfer torque induced magnetic switching as well as rf excitations of perpendicular magnetic tunnel junction devices (pMTJs) with the aim to demonstrate the dual functionality for memory and microwave […]

Read more

HProbe is the latest spin-off company from SPINTEC, based on our expertise in MRAM research at the wafer scale. HProbe offers a 3D magnetic field wafer-level electrical tester for all types of MRAM (STT, SOT, OST, …), planar and perpendicular MTJ, magnetic sensors etc. The tester embed all standard procedures for testing and analyzing devices. […]

Read more

Misalign to write faster

The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

Read more

Special issue on Spintronics, published in the proceedings of the IEEE, vol.104 (10), October 2016 Editors: Hideo Ohno, Mark Stiles, Bernard Dieny

Read more

On 25th October 2016 our host Institut INAC welcomes students for a presentation of internship topics proposed to host Master-2 students during Spring 2017. Details will be provided later.

Read more

Overview GREAT (European H2020 project) was accepted at the Summer 2015. Its kick-off meeting took place at SPINTEC in Grenoble on February 22nd-23rd 2016. The project aims at developing magnetic stacks able to equally perform memory, radio-frequency as well as sensor functionalities on the same chip, to address Internet of Things (IoT) applications. The main objectives of […]

Read more

A new research project has been accepted at the last FET H2020 call. The objective of SPICE is to realize a novel integration platform that combines photonic, magnetic and electronic components. Its validity will be shown by a conceptually new spintronic-photonic memory chip demonstrator with three orders of magnitude faster write speed and two orders […]

Read more

Jeudi 21 Janvier 2016 à 14H00, Phelma MINATEC – Amphithéâtre M001 (3 Parvis Louis Néel – 38016 Grenoble) Monsieur Antoine CHAVENT du DSM/INAC/SPINTEC soutiendra une thèse intitulée « Réduction du champ d’écriture de mémoires magnétiques à écriture assistée thermiquement à l’aide du couple de transfert de spin » Les mémoires magnétiques à accès aléatoire (MRAM) développées par […]

Read more




Copyright © 2015 - Spintec.fr - Réalisation par OXIWIZ

Scroll to Top