The group covers all aspects of fundamental physics related to spin electronics by employing a wide range of theoretical approaches including ab initio, tight-binding, free electron and diffusive methods, combined with micromagnetic simulation approaches based on solution of Landau-Lifshitz-Gilbert (LLG) equation. This allows explaining experimental observations, providing solutions for specific problems and predicting novel properties and phenomena guiding the experimental work to optimize spintronic nanostructures.
Electronic structure and magnetic properties of materials from first principles
Ab initio calculations based on DFT are performed in order to provide insights into fundamental mechanisms of various spintronic phenomena, and to propose novel materials and their efficient combinations with required electronic structure and magnetic properties for optimal performance of spintronic devices.
Spin-dependent transport theories
We employ tight-binding, free electron and diffusive approaches including Green function techniques in the framework of Keldysh and Kubo formalisms, in order to describe spin and charge transport properties in magnetic nanostructures with non-collinear magnetic moments in vertical, lateral and complex geometries.
Theoretical concepts for organic and graphene spintronics
The goal of this topic is to harvest theoretically novel spin-dependent properties (e.g. proximity effects and defect induced magnetism etc.) in organic, graphene and related 2D materials based structures in the context of emerging field of graphene spintronics.
Magnetization dynamics (macrospin and micromagnetic) simulations under applied magnetic field and/or spin polarized currents are developed to address functionalities of spintronic devices (e.g. magnetization switching, synchronization and modulation for oscillators) in various geometries. Straightforward analytical models are developed to supplement fast and efficient understanding of the magnetization dynamics.
- Ali HALLAL (2015-2019)
- Sergey NIKOLAEV (2015-2017)
- Debapriya CHAUDHURY (2016-2018)
- Cristian ORTIZ PAUYAC (2016-2017)
- Hongxin YANG (2013-2015)
- Daniel SOLIS LERMA (2016-2020)
- Paulo COELHO (with Magnetic Sensors Group, 2014-2017)
- Libor VOJACEK (2020)
- Brian CHARLES (with MRAM Group, 2016)
- ANR SpinSpike (2021-2024)
- ANR UFO (2021-2024)
- EU H2020 FET Project Flagship “Graphene” Core 3 (2020-2023)
- ANR MAGICVALLEY (2018-2021)
- ANR FEOrgSPIN (2018-2021)
- EU H2020 FET Project Flagship “Graphene” Core 2 (2018-2020)
- ANR JCJC MATEMAC-3D (2017-2020)
- EU H2020 ICT Project “SPICE” (2016-2020)
- EU H2020 ICT Project “GREAT” (2016-2019)
- ANR ELECSPIN (2016-2019)
- EU H2020 FET Project Flagship “Graphene” Core 1 (2016-2018)
- EU FET FP7 Project Flagship “Graphene” (2013-2016)
- EU M-ERA.NET HEUMEM supported via ANR-DFG (2014-2017)
- UGA Émergence et partenariat stratégique avec Western Digital (2015-2017)
- Samsung SGMI (2014-2017)
- ANR SOSPIN (2013-2016)
- ANR NMGEM (2010-2015)
- AGI14SMI15 AGIR (2014-2015)
- Transilvania University, Brasov, Romania
- IRIG/PHELIQS, Grenoble, France
- Institut Néel, Grenoble, France
- Unité Mixte Physique CNRS/Thalès, Palaiseau, France
- Laboratoire de Physique des Solides, Orsay, France
- Catalan Institute of Nanotechnology, Barcelona, Spain
- Institut Jean Lamour, Nancy, France
- Moscow Lomonosov State University, Moscow, Russia
- King Abdullah University of science and technology, Thuwal, Saudi Arabia
- University of Puerto Rico, San Juan, PR, USA
- Western Digital Corporation, CA, USA
- University of Bielefeld, Germany
- University of Kaiserslautern, Germany
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- ETH, Zurich, Switzerland
- NIMTE, Ningbo, China
- ELECSPIN – An ANR project (July 29th, 2016)
Objectives ELECSPIN project has just been accepted at the 2016 ANR call. This collaborative research project aims to investigate the advanced concept of radically new nanoelectronics devices based on the electric-field control of spin-based phenomena and establish proof of principle ...
- Giant enhancement of magnetic effect will benefit spintronics (January 08th, 2016)
Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher ...
- Micromagnetic simulations for spintronic devices (July 02nd, 2015)
L.D. Buda-Prejbeanu, H. Szambolics, F. Garcia-Sanchez, I. Firastrau, J.Ch. Toussaint The effect of the spin polarized current on the magnetization dynamics is an extremely hot topic nowadays both from fundamental and applicative point of view. The ...
- Chapter — Spin transfer torques in magnetic tunnel junctions (January 01st, 2009)
A. Manchon, N. Ryzhanova, M. Chshiev, A. Vedyaev, K.J. Lee, B. Dieny, Spin transfer torques in magnetic tunnel junctions, 63-106, in Giant Magnetoresistance: New Research, Eds: A. D. Torres and D. A. Perez, Nova Science ...